NTD3817N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction-to-Case (Drain)
Junction-to-TAB (Drain)
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – Steady State (Note 2)
Symbol
R q JC
R q JC-TAB
R q JA
R q JA
Value
5.8
4.5
59
121
Unit
° C/W
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /
T J
V GS = 0 V, I D = 250 m A
16
15.5
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 16 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 16 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.5
5.1
2.5
V
mV/ ° C
Drain-to-Source On Resistance
R DS(on)
V GS = 10 V
V GS = 4.5 V
I D = 15 A
I D = 15 A
12.8
19.2
13.9
29
m W
Forward Transconductance
g FS
V DS = 1.5 V, I D = 15 A
28
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
702
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
V GS = 0 V, f = 1.0 MHz, V DS = 12 V
V GS = 4.5 V, V DS = 12 V, I D = 15 A
V GS = 10 V, V DS = 12 V, I D = 15 A
257
168
7.0
0.6
2.5
3.5
13.5
10.5
pF
nC
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t d(ON)
12
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
t d(ON)
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 12 V,
I D = 15 A, R G = 3.0 W
V GS = 10 V, V DS = 12 V,
I D = 15 A, R G = 3.0 W
50
12
4.6
8.0
47
20
10
ns
ns
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
5. Assume standoff of 110 mm
http://onsemi.com
2
相关PDF资料
NTD40N03R-1G MOSFET N-CH 25V 7.8A IPAK
NTD4302G MOSFET N-CH 30V 8.4A DPAK
NTD4804N-1G MOSFET N-CH 30V 14.5A IPAK
NTD4805N-1G MOSFET N-CH 30V 12.6A IPAK
NTD4806NT4G MOSFET N-CH 30V 11.3A DPAK
NTD4808N-1G MOSFET N-CH 30V 9.8A IPAK
NTD4809NHT4G MOSFET N-CH 30V 9A DPAK
NTD4809NT4G MOSFET N-CH 30V 9.6A DPAK
相关代理商/技术参数
NTD40 制造商:EDI 制造商全称:Electronic devices inc. 功能描述:HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
NTD40N03R 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD40N03R-001 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD40N03R-1 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 45 Amps, 25 Volts
NTD40N03R-1G 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD40N03RG 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD40N03RT4 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD40N03RT4G 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube